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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC789 DESCRIPTION With TO-220C package Low collector saturation voltage APPLICATIONS For medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage HAN INC Collector-emitter voltage Emitter-base voltage Collector current Base current SEM GE Open base Open collector OND IC TOR UC VALUE 70 70 5 4 1 UNIT V V V A A W ae ae Collector power dissipation Junction temperature Storage temperature TC=25ae 30 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC789 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage IC=25m A;IB=0 70 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=1mA; IC=0 IC=2 A;IB=0.2 A 5 V Collector-emitter saturation voltage 1.0 V VBEsat Base-emitter saturation voltage IC=2 A;IB=0.2 A 1.5 V ICBO Collector cut-off current VCB=70V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain fT Transition frequency R Y 70-140 120-240 IC=0.5A ; VCE=5V IC=0.5A ; VCE=10V hFE classifications O 40-80 HAN INC SEM GE OND IC TOR UC 3 40 240 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC789 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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